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grantDate 2019-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2019-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10364191-B2
titleOfInvention Methods of forming articles including silicon carbide by spark plasma sintering
abstract A method of forming silicon carbide by spark plasma sintering comprises loading a powder comprising silicon carbide into a die and exposing the powder to a pulsed current to heat the powder at a rate of between about 50° C./min and about 200° C./min to a peak temperature while applying a pressure to the powder. The powder is exposed to the peak temperature for between about 30 seconds and about 5 minutes to form a sintered silicon carbide material and the sintered silicon carbide material is cooled. Related structures and methods are disclosed.
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