http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10347512-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ec83ea8e6721b1a5654b038fdb9b223f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05B3-0047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2605 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F26B19-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F24C7-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F24C11-00 |
| filingDate | 2016-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce5bcd564b3916da56f16f40182e3f79 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e477ce7979f0ed00a419d101896751f |
| publicationDate | 2019-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-10347512-B2 |
| titleOfInvention | Method and apparatus for light-irradiation heat treatment |
| abstract | Light is applied for preheating from a halogen lamp to a lower surface of a semiconductor wafer supported on a susceptor within a chamber. Thereafter, flash light is applied for flash heating from a flash lamp to an upper surface of the semiconductor wafer. High-temperature treatment gas heated by a heater is supplied into the chamber to preheat a structure inside the chamber including a susceptor before heat treatment for an initial semiconductor wafer of a lot starts. By raising the temperature of the structure inside the chamber to a temperature substantially equivalent to a temperature of the structure during steady treatment, all semiconductor wafers constituting the lot are supportable on the susceptor maintained at a constant temperature without the necessity of dummy running. Accordingly, a temperature history is equalized for all the semiconductor wafers. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11490473-B2 |
| priorityDate | 2015-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.