| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12d24c0a12c3ecdb6d9a47d623d96e76 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02M1-0054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02B70-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02M1-385 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02M7-537
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02M7-5395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02M1-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02M1-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02M7-537 |
| filingDate |
2018-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5e34a0b757801d3ed577ee3a2c66b8d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19c554931187d870acfef2e68aa5718c |
| publicationDate |
2019-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10340817-B2 |
| titleOfInvention |
Silicon carbide MOSFET inverter circuit |
| abstract |
The inverter circuit has a first silicon carbide MOSFET and a second silicon carbide MOSFET connected in series and external freewheel diodes respectively connected in anti-parallel to the first and second MOSFETs. The inverter circuit is configured such that during a deadtime when the first silicon carbide MOSFET and the second silicon carbide MOSFET are OFF and freewheeling current starts flowing, a pulse width of a transient current flowing to a built-in diode of the first silicon carbide MOSFET or a built-in diode of the second silicon carbide MOSFET is less than 2 μs. |
| priorityDate |
2017-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |