| abstract |
A semiconductor device includes at least two stacked SOI levels or configurations, each of which may include transistor elements formed on the basis of a given technology node. At least the uppermost device level may include a back bias mechanism for providing superior controllability of the respective transistor elements. In some illustrative embodiments, at least two of the stacked SOI configurations may have implemented therein a back bias mechanism, wherein an appropriate contact regime is provided so as to connect to the respective conductive regions or layers below the corresponding buried insulating layers for each stacked device level. Consequently, increased lateral packing density may be accomplished on the basis of a given technology node. |