Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-15311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00012 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76838 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-538 |
filingDate |
2017-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2019-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_411b1a4d763fdaae4f6ce0d6d709eb90 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e20fb71c7bdd9233e18ac24848a1bb95 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7f5b49b55f3fa9eef40d79ceb4c4aae |
publicationDate |
2019-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10340204-B2 |
titleOfInvention |
Semiconductor devices having through electrodes and methods for fabricating the same |
abstract |
The semiconductor device includes a substrate including an integrated circuit and a contact that are electrically connected to each other, an insulation layer covering the substrate and including metal lines, and a through electrode electrically connected to the integrated circuit. The insulation layer includes an interlayer dielectric layer on the substrate and an intermetal dielectric layer on the interlayer dielectric layer. The metal lines include a first metal line in the interlayer dielectric layer and electrically connected to the contact, and a plurality of second metal lines in the intermetal dielectric layer and electrically connected to the first metal line and the through electrode. The through electrode includes a top surface higher than a top surface of the contact. |
priorityDate |
2016-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |