Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32133 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2059 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-093 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0277 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 |
filingDate |
2015-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2019-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db8d6db9993cc08c4b5cef29be104ffc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33e43af9089ad48a8cdaeffb4c4bc27f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6f6032396d74c7aa01b1cee8137146b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c189ea3b3ba4983602fe17166c23a3e6 |
publicationDate |
2019-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10338474-B2 |
titleOfInvention |
Underlying absorbing or conducting layer for Ebeam direct write (EBDW) lithography |
abstract |
Lithographic apparatuses suitable for, and methodologies involving, complementary e-beam lithography (CEBL) are described. Particular embodiments are directed to implementation of an underlying absorbing and/or conducting layer for ebeam direct write (EBDW) lithography. |
priorityDate |
2015-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |