| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_887e125008cf84c53554d9e68cf7f02b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035272
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1844 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-88 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352 |
| filingDate |
2016-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b4f04924b88fb75aa7d5f786d28c5ec |
| publicationDate |
2019-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10326042-B2 |
| titleOfInvention |
Highly doped layer for tunnel junctions in solar cells |
| abstract |
A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta-doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta-doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode. |
| priorityDate |
2009-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |