| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9047b16961c0aee78d7de367969339b2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8416
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-71
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-063 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-021
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8416
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L45-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-2463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-84 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C13-00 |
| filingDate |
2018-10-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e89ce154d38dbf3cf57aabc6a6c53ed |
| publicationDate |
2019-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10325957-B2 |
| titleOfInvention |
Semiconductor memory device and method of manufacturing the same |
| abstract |
According to an embodiment, a semiconductor memory device comprises first wiring lines, second wiring lines, and first variable resistance elements. The first wiring lines are arranged in a first direction and have as their longitudinal direction a second direction intersecting the first direction. The second wiring lines are arranged in the second direction and have the first direction as their longitudinal direction. The first variable resistance elements are respectively provided at intersections of the first wiring lines and the second wiring lines. In addition, this semiconductor memory device comprises a first contact extending in a third direction that intersects the first direction and second direction and having one end thereof connected to the second wiring line. The other end and a surface intersecting the first direction of this first contact are covered by a first conductive layer. |
| priorityDate |
2015-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |