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filingDate 2016-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2019-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10305251-B2
titleOfInvention Laser diodes with layer of graphene
abstract According to an example of the present disclosure a semiconductor laser diode includes a layer of graphene between an active laser region and a semiconductor substrate structure. The semiconductor laser diode may further include a first pair of electrodes to apply a potential difference across the active laser region and a second pair of electrodes to apply a potential difference across the layer of graphene.
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