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publicationDate 2019-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10305027-B2
titleOfInvention Magnetoresistive element and magnetic memory device
abstract According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first nonmagnetic layer includes an oxide including an inverse-spinel structure.
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