| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate |
2017-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ebf84e65c15368589e965ec37eba3e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5451b537f81905f5c222e010b2d3476b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23118d97e5f19aeee8041cc8138baad9 |
| publicationDate |
2019-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10304721-B1 |
| titleOfInvention |
Formation of isolation layers using a dry-wet-dry oxidation technique |
| abstract |
In some examples, a method includes etching a substrate to form a trench, wherein the trench includes sidewalls. The method further includes forming a first isolation region in the trench by growing a first layer of a first thickness on the sidewalls using a dry oxidation technique and depositing a second layer to fill a portion of the trench, the second layer contacting the first layer. The method further includes etching third and fourth layers atop the substrate to expose a first portion of the substrate. The method further includes growing a second isolation region in the substrate through the first portion by using a dry-wet-dry oxidation technique. |
| priorityDate |
2017-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |