| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0519
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-03426
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05624
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-83143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-03416
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05149
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05076
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-03452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0346
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-08145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80359
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80896
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0361
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-03845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-03848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05147
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-8034
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-83203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80986
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-83896 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-83
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-50 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-48 |
| filingDate |
2017-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd1eff20686f563ab9b55803b4d60ae6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8ac2a5842aea96cd48c4f67bc65fd07 |
| publicationDate |
2019-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10297569-B2 |
| titleOfInvention |
Method of forming a three-dimensional bonded semiconductor structure having nitridized oxide regions |
| abstract |
A first semiconductor structure including a first bonding oxide layer having a first metallic bonding structure embedded therein and a second semiconductor structure including a second bonding oxide layer having a second metallic bonding structure embedded therein are provided. A nitride surface treatment process is performed to provide a nitrided surface layer to each structure. Each nitrided surface layer includes nitridized oxide regions located in an upper portion of the bonding oxide layer and nitridized metallic regions located in an upper portion of the metallic bonding structures. The nitrogen within the nitridized metallic regions is then removed to restore the upper portion of the metallic bonding structures to its original composition. Bonding is performed to form a dielectric bonding interface between the nitridized oxide regions present in the first and second structures, and a metallic bonding interface between the first and second metallic bonding structures. |
| priorityDate |
2016-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |