| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1e6ddf53a7a8db01a5314268a2c323b9 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2203-0792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-012
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-019
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-07 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B3-0029
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00182
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00269
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00301 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B3-00 |
| filingDate |
2016-10-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_98cabce48ee95a047b3a5bf652cab0a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7b3b3739ac50f51a8eb0a3d3e3eed10 |
| publicationDate |
2019-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10294097-B2 |
| titleOfInvention |
Aluminum nitride (AlN) devices with infrared absorption structural layer |
| abstract |
A micro-electro-mechanical system device is disclosed. The micro-mechanical system device comprises a first silicon substrate comprising: a handle layer comprising a first surface and a second surface, the second surface comprises a cavity; an insulating layer deposited over the second surface of the handle layer; a device layer having a third surface bonded to the insulating layer and a fourth surface; a piezoelectric layer deposited over the fourth surface of the device layer; a metal conductivity layer disposed over the piezoelectric layer; a bond layer disposed over a portion of the metal conductivity layer; and a stand-off formed on the first silicon substrate; wherein the first silicon substrate is bonded to a second silicon substrate, comprising: a metal electrode configured to form an electrical connection between the metal conductivity layer formed on the first silicon substrate and the second silicon substrate. |
| priorityDate |
2012-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |