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filingDate 2016-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76b909c837c20ba9f7d6cedb5555b51b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_140a6209ea73ceb9b0e46a9784d7536d
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publicationDate 2019-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10263145-B2
titleOfInvention Ultraviolet light emitting device
abstract A light emitting device, according to one embodiment, may comprise: a substrate; a first conductive semiconductor layer disposed on the substrate; an active layer disposed on the first conductive semiconductor layer and generating an ultraviolet light; a second conductive semiconductor layer disposed on the active layer; and a hole injection layer disposed between the active layer and the second conductive semiconductor layer and comprising a first layer comprising Al x Ga 1-x N (0<x≤1) and a second layer comprising GaN. The embodiment has the hole injection layer to be multi-layered, thereby having the effect of effectively preventing the absorption of ultraviolet light.
priorityDate 2015-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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