http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10261110-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9ec030fc062b270c25327af9127bed3a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36e2f31c97fb6a039db1cef779c8ddc7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2601 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R1-07307 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R1-07371 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R1-073 |
| filingDate | 2016-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63a0c9ff0dcf84689c891cf9e1af7efe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33eefd912fc9d389010628ff6aa1013f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1167428534d988a791c4da51917e661b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eab7554ad1618b293797311fa12ba221 |
| publicationDate | 2019-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-10261110-B2 |
| titleOfInvention | Probe guide plate having a silicon oxide layer formed on surfaces and on an inner wall of a through hole thereof, and a protective insulating layer formed on the silicon oxide layer, and probe apparatus including the probe guide plate |
| abstract | A probe guide plate includes: a silicon substrate including one surface and the other surface opposite to the one surface; a through hole formed through the silicon substrate to extend from the one surface of the silicon substrate to the other surface of the silicon substrate; a silicon oxide layer formed on the one surface of the silicon substrate, the other surface of the silicon substrate, and an inner wall surface of the through hole; and a protective insulating layer formed on the silicon oxide layer. The protective insulating layer is formed on at least one of the one surface and the other surface of the silicon substrate via the silicon oxide layer, and partially formed on the inner wall surface of the through hole via the silicon oxide layer. |
| priorityDate | 2015-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.