| abstract |
A phase change memory device containing a phase change memory material layer includes a vertically repeating sequence of unit layer stacks located over a substrate, a plurality of openings vertically extending through the vertically repeating sequence, a plurality of vertical bit lines located within a respective one of the plurality of openings, and vertical stacks of insulating spacers. Each of the unit layer stacks includes an insulating layer, at least one of the phase change memory material layer or a threshold switch material layer, and an electrically conductive word line layer. Each of the insulating spacers laterally surrounds a respective one of the plurality of vertical bit lines, and contacts a sidewall of a respective one of the electrically conductive word line layers. |