| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 |
| filingDate |
2017-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_086d9cedbca3cfda458c3321c3d70ca5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5bec914837b57a727c542a13f77a444
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb9722a1f8f8db6a3c504c07e629fe55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99f69e17b3814e8280305647a37495fa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83c256351021ef63073134fd7fdc55fa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_326b3eb169e0be47174a9bf1f546d784 |
| publicationDate |
2019-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10243077-B2 |
| titleOfInvention |
FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth |
| abstract |
A method forming a semiconductor device that in one embodiment includes forming a gate structure on a channel region of fin structures, and forming a flowable dielectric material on a source region portion and a drain region portion of the fin structures. The flowable dielectric material is present at least between adjacent fin structures of the plurality of fin structures filling a space between the adjacent fin structures. An upper surface of the source region portion and the drain region portion of fin structures is exposed. An epitaxial semiconductor material is formed on the upper surface of the source region portion and the drain region portion of the fin structures. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020066908-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11081583-B2 |
| priorityDate |
2014-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |