| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2009 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-309
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0287
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-320275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34346 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate |
2016-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a46eb7c3cf9d2e4f41ceaa9eac9cdfa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bce1a0174558ab3300029b9a9f4745c |
| publicationDate |
2019-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10236663-B2 |
| titleOfInvention |
Semiconductor optical device |
| abstract |
A semiconductor optical device includes a laminated structure constituted of a first compound semiconductor layer of an n type, an active layer, and a second compound semiconductor layer of a p type, the active layer including at least 3 barrier layers and well layers interposed among the barrier layers, and the semiconductor optical device satisfying Eg p-BR >Eg n-BR >Eg Well when a bandgap energy of the barrier layer adjacent to the second compound semiconductor layer is represented by Eg p-BR , a bandgap energy of the barrier layer between the well layers is represented by Eg Well , and a bandgap energy of the barrier layer adjacent to the first compound semiconductor layer is represented by Eg n-BR . |
| priorityDate |
2015-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |