| abstract |
A method of producing semiconductor nanoparticles is provided. The method includes heating primary semiconductor nanoparticles and a salt of an element M 1 in a solvent at a temperature set in a range of 100° C. to 300° C. The primary semiconductor nanoparticles contain the element M 1 , an element M 2 , optionally an element M 3 , and an element Z, and have an average particle size of 50 nm or less. The element M 1 is at least one element selected from the group consisting of Ag, Cu, and Au. The element M 2 is at least one element selected from the group consisting of Al, Ga, In, and Tl. The element M 3 is at least one element selected from the group consisting of Zn and Cd. The element Z is at least one element selected from the group consisting of S, Se, and Te. |