| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2017-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b8e5fa1a639b92e754a6a42d3c8881e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b71ed8d1014ded9f660a7efc37fd1c00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46629f4e6bef29ccc8998cfc9bfce57e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa57155a94ec485068066724e7721ca7 |
| publicationDate |
2019-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10229986-B1 |
| titleOfInvention |
Vertical transport field-effect transistor including dual layer top spacer |
| abstract |
A vertical transport field-effect transistor includes a top source/drain region separated from an underlying gate stack by a multi-layer top spacer that includes an oxygen barrier layer beneath a top dielectric layer. Techniques for fabricating the transistor include depositing the oxygen barrier layer over the gate stack prior to depositing the top dielectric layer. The oxygen barrier layer blocks oxygen diffusion during deposition of the top dielectric layer, thereby avoiding damage to underlying interfacial and gate dielectric layers. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10453934-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10825916-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10916638-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022336660-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020105757-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11728425-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10629730-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022246479-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112151606-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11538924-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11152266-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11081398-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11227801-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021119019-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112151606-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10916651-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019385914-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11646235-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113380873-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113380873-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11545571-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020185516-A1 |
| priorityDate |
2017-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |