Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3083 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02323 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31056 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 |
filingDate |
2016-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2019-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1da0ce3b77e3fcfbdc570074588e7df3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7e5b74fc50123a573883dd1b0e87843 |
publicationDate |
2019-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10224414-B2 |
titleOfInvention |
Method for providing a low-k spacer |
abstract |
A method for forming semiconductor devices with spacers is provided. SiCO spacers are formed on sides of features. Protective coverings are formed over first parts of the SiCO spacers, wherein second parts of the sidewalls of the SiCO spacers are not covered by the protective coverings. A conversion process is provided to the second parts of the SiCO spacers which are not covered by the protective coverings, which changes a physical property of the second parts of the SiCO spacers which are not covered by the protective coverings, wherein the protective coverings protects the first parts of the SiCO spacers from the conversion process. |
priorityDate |
2016-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |