| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_786a55964f0623938e701b4510cacfff |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1087
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0634
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7823
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-761
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-761
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2015-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35619b9d41976cc19caee4834402217f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99b86d6d1e60a238e6f8db3f9147f615
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1ea23cc3c68b44de7285c6885683cf3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4214a0d3c993766d6d8f2c15625a9da5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f088c5663f92aebdcbf07f64385b7a74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0b1628f2c71869569693f9339d9e0dc |
| publicationDate |
2019-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10217860-B2 |
| titleOfInvention |
Partially biased isolation in semiconductor devices |
| abstract |
A device includes a semiconductor substrate, a doped isolation barrier disposed in the semiconductor substrate and defining a core device area within the doped isolation barrier, an isolation contact region disposed in the semiconductor substrate outside of the core device area and to which a voltage is applied during operation, and a depleted well region disposed in the semiconductor substrate outside of the core device area. The depleted well region electrically couples the isolation contact region and the doped isolation barrier such that the doped isolation barrier is biased at a voltage level lower than the voltage applied to the isolation contact region. |
| priorityDate |
2015-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |