Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9884b2360f2413d7edea0d5af39f775a |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0066 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-387 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-872 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
filingDate |
2016-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2019-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9cb0549f8b152851a90b56fc79a0459b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3184840a1b400bf7a4140d9ffa3fd103 |
publicationDate |
2019-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10217792-B2 |
titleOfInvention |
Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip |
abstract |
The invention relates to a method for producing an optoelectronic semiconductor chip ( 1 ). A semiconductor layer sequence ( 3 ) is provided, comprising a first semiconductor layer ( 3 a ) and a second semiconductor layer ( 3 b ). Furthermore, a first contact layer ( 5 a ) is provided which extends laterally along the first semiconductor layer ( 3 a ) and electrically contacts same. A third semiconductor layer ( 7 ) is applied onto a first contact layer ( 5 a ) face facing away from the semiconductor layer sequence ( 3 ). A recess ( 8 ) is formed which extends through the third semiconductor layer ( 7 ), the first contact layer ( 5 a ), and the first semiconductor layer ( 3 a ) into the second semiconductor layer ( 3 b ). A passivation layer ( 9 ) is applied onto a third semiconductor layer ( 7 ) face facing away from the semiconductor layer sequence ( 3 ). At least one first ( 9 a ) and at least one second passage opening ( 9 b, 9 c ) are formed in the passivation layer ( 9 ). A second contact layer ( 5 b ) is applied which electrically contacts the second semiconductor layer ( 3 b ) in the region of the at least one first passage opening ( 9 a ) and the third semiconductor layer ( 7 ) in the region of the at least one second passage opening ( 9 b, 9 c ). The invention additionally relates to an optoelectronic semiconductor chip ( 1 ). |
priorityDate |
2015-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |