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filingDate 2016-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2019-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10211153-B2
titleOfInvention Low aspect ratio interconnect
abstract A low aspect ratio interconnect is provided and includes a metallization layer, a liner and a metallic interconnect. The metallization layer includes bottommost and uppermost surfaces. The uppermost surface has a maximum post-deposition height from the bottommost surface at first metallization layer portions. The metallization layer defines a trench at second metallization layer portions. The liner includes is disposed to line the trench and includes liner sidewalls that have terminal edges that extend to the maximum post-deposition height and lie coplanar with the uppermost surface at the first metallization layer portions. The metallic interconnect is disposed on the liner to fill a trench remainder and has an uppermost interconnect surface that extends to the maximum post-deposition height and lies coplanar with the uppermost surface at the first metallization layer portions.
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