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filingDate 2015-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfc720503e74a65e9c5703bf204e1182
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e28418690b89e533c53f55328c0ba1a
publicationDate 2019-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10204779-B2
titleOfInvention Thin film transistor and manufacturing method thereof, array substrate and manufacturing method thereof, display apparatus
abstract The present invention provides a thin film transistor and a manufacturing method thereof, an array substrate comprising the thin film transistor and a manufacturing method thereof, and a display apparatus comprising the array substrate. The manufacturing method of the thin film transistor comprises steps of forming a gate, a gate insulating layer, a semiconductor active layer, a source and a drain on a substrate, wherein the steps of forming the gate insulating layer and the semiconductor active layer comprise: preparing an insulating film, the insulating film comprises metal oxide insulating material; performing ion implantation on a predefined region of the insulating film, so that the metal oxide insulating material of partial-thickness of the insulating film in the predefined region is transformed into metal oxide semiconductor material to form the semiconductor active layer, and the rest of the insulating film forms the gate insulating layer.
priorityDate 2015-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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