Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7e71244168b4688407cb82ced1a73849 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-6616 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-6683 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05567 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-367 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2223-6672 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0623 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-66 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76251 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-291 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3731 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-367 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-373 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-082 |
filingDate |
2017-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2019-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51a760eff825591a53cd41f4a65949c8 |
publicationDate |
2019-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10192805-B2 |
titleOfInvention |
Thermally conductive and electrically isolating layers in semiconductor structures |
abstract |
A semiconductor structure includes a semiconductor wafer having at least one semiconductor device integrated in a first device layer, a thermally conductive but electrically isolating layer on a back side of the semiconductor wafer, a front side glass on a front side of the semiconductor wafer, where the thermally conductive but electrically isolating layer is configured to dissipate heat from the at least one semiconductor device integrated in the semiconductor wafer. The thermally conductive but electrically isolating layer is selected from the group consisting of aluminum nitride, beryllium oxide, and aluminum oxide. The at least one semiconductor device is selected from the group consisting of a complementary-metal-oxide-semiconductor (CMOS) switch and a bipolar complementary-metal-oxide-semiconductor (BiCMOS) switch. The semiconductor structure also includes at least one pad opening extending from the back side of the semiconductor wafer to a contact pad. |
priorityDate |
2016-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |