| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0034
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-10 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-5253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-5256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-8445
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L51-0094 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2017-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d465c0467420f3d1dbff1ab9602d5056 |
| publicationDate |
2019-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10181581-B2 |
| titleOfInvention |
Fluorine-containing plasma polymerized HMDSO for OLED thin film encapsulation |
| abstract |
Methods for forming an OLED device are described. An encapsulation structure having organic buffer layer sandwiched between barrier layers is deposited over an OLED structure. The buffer layer is formed with a fluorine-containing plasma. The second barrier layer is then deposited over the buffer layer. Additionally, to ensure good adhesion, a buffer adhesion layer is formed between the buffer layer and the first barrier layer. Finally, to ensure good transmittance, a stress reduction layer is deposited between the buffer layer and the second barrier layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11038153-B2 |
| priorityDate |
2013-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |