| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3df7f92662b83b84e646d848550503ac |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66492
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0626
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4175
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-781
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66712 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate |
2017-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae385814878ab5c79b98fc585d596677
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_883d68b042e037467f983b7e75191262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ac6fda0294e063de444b1938cb33811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57c4d34a089daf46f1368598bcfecaa9 |
| publicationDate |
2019-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10181523-B2 |
| titleOfInvention |
Transistor structure with improved unclamped inductive switching immunity |
| abstract |
A laterally diffused metal oxide semiconductor (LDMOS) transistor structure with improved unclamped inductive switching immunity. The LDMOS includes a substrate and an adjacent epitaxial layer both of a first conductivity type. A gate structure is above the epitaxial layer. A drain region and a source region, both of a second conductivity type, are within the epitaxial layer. A channel is formed between the source and drain region and arranged below the gate structure. A body structure of the first conductivity type is at least partially formed under the gate structure and extends laterally under the source region, wherein the epitaxial layer is less doped than the body structure. A conductive trench-like feed-through element passes through the epitaxial layer and contacts the substrate and the source region. The LDMOS includes a tub region of the first conductivity type formed under the source region, and adjacent laterally to and in contact with said body structure and said trench-like feed-through element. |
| priorityDate |
2014-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |