| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ba781f902c7c0834a16ca5c1db7c1b1c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_85e53ccf3719d209efe49cac41c7b6d4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-9202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06589
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06575
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06541
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-2919 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3677
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-073 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-367
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L25-065 |
| filingDate |
2010-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16f401ba9edfee65f2e8f239446cf6ba |
| publicationDate |
2019-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10181454-B2 |
| titleOfInvention |
Dummy TSV to improve process uniformity and heat dissipation |
| abstract |
In a stack of chips which each include active circuit regions, a plurality of through-silicon via (TSV) structures are formed for thermally conducting heat from the multi-chip stack by patterning, etching and filling with thermally conductive material a plurality of TSV openings in the multi-chip stack, including a first larger TSV opening that extends through substantially the entirety of the multi-chip stack without penetrating any active circuit region, and a second smaller TSV opening that extends down to but not through an active circuit region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11721604-B2 |
| priorityDate |
2010-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |