| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8d0fc2b70675ee19bd5fc464f5ae9061
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_994dfece41cf9fd70045ba8c099b5cb0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6b689f1045f17f45482856b88971a5b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7025dd521889319fc74da2dc8da0e31a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-10 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 |
| filingDate |
2017-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e1d662ec749fe9bbf610906f1c10139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89d989621335c0671f50e16ce5cec2cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_593e24d38d8e8135b3476b4f22679269 |
| publicationDate |
2019-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10177279-B2 |
| titleOfInvention |
Light-emitting diode with multiple N contact structure |
| abstract |
Provided are a horizontal light emitting diode (LED) device and a method for fabricating the same. The horizontal LED device includes a sapphire substrate; an n-type GaN layer disposed on the sapphire substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a plurality of holes exposing the n-type GaN layer through the current spreading layer, the p-type GaN layer, and activation layer; and an n-electrode disposed on the exposed n-type GaN layer and being in ohmic contact with the exposed n-type GaN layer at a plurality of positions on bottom surfaces of the plurality of holes. |
| priorityDate |
2016-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |