| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-535
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate |
2017-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6516ff4731606efdd4e628b6a3412c7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fbe76b0527a6b0a89c07b56cd82fc0c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de30fb315f5b6d14fec36bb45e1fd659 |
| publicationDate |
2019-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10177151-B1 |
| titleOfInvention |
Single-diffusion break structure for fin-type field effect transistors |
| abstract |
A method and structure for a semiconductor device that includes one or more fin-type field effect transistors (FINFETs) and single-diffusion break (SDB) type isolation regions, which are within a semiconductor fin and define the active device region(s) for the FINFET(s). Asymmetric trenches are formed in a substrate through asymmetric cuts in sacrificial fins formed on the substrate. The asymmetric cuts have relatively larger gaps between fin portions that are closest to the substrate, and deeper portions of the asymmetric trenches are relatively wider than shallower portions. Channel regions are formed in the substrate below two adjacent fins. Source/drain regions of complementary transistors are formed in the substrate on opposite sides of the channel regions. The asymmetric trenches are filled with an insulator to form a single-diffusion break between two source/drain regions of different ones of the complementary transistors. Also disclosed is a semiconductor structure formed according to the method. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10825741-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11646361-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020161190-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11195911-B2 |
| priorityDate |
2017-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |