| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78654
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate |
2017-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_337c73316e986c8c90bc56901d0a2631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf848ccd340484a8d2f4bb368aeb51a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72c790d51683f1946b768304dd683cf1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aca4871baff82c610077f78cb5adefd5 |
| publicationDate |
2019-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10170636-B2 |
| titleOfInvention |
Gate-to-bulk substrate isolation in gate-all-around devices |
| abstract |
A method for fabricating a semiconductor device comprises forming a sacrificial layer of a first semiconductor material on a substrate, a layer of a second semiconductor material on the sacrificial layer, and a layer of a third semiconductor material on the layer of the second semiconductor material. Portions of the layer of the deposited material are removed to form a first nanowire arranged on the sacrificial fin and a second nanowire arranged on the first nanowire. An oxidizing process is performed that forms a first layer of oxide material on exposed portions of the second nanowire and a second layer of oxide material on exposed portions of the sacrificial fin, the first layer of oxide material having a first thickness and the second layer of oxide material having a second thickness, where the first thickness is less than the second thickness. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10714595-B2 |
| priorityDate |
2016-02-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |