Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02192 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4958 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7856 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
filingDate |
2015-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2019-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5ad48dc1266dcaa419573620030bca9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50ec5d6304eb8d7b3fd673fc5772ae8e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_334e1935ebe84fb5b2c2fa8d28d27c43 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7bad2092c5a51aa3974de136a70a1da0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96f15ab9268dfe9626e90d92b6000293 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_caab8ccb770249c3ffe5bfd7eb03dd5a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc59c2b7300140f04f2b2bdffa8643a0 |
publicationDate |
2019-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10170477-B2 |
titleOfInvention |
Forming MOSFET structures with work function modification |
abstract |
A method of making a semiconductor device comprises forming a first channel region comprising a first channel region material and a second channel region comprising a second channel region material; disposing a gate dielectric on the first channel region and second channel region; depositing a work function modifying material on the gate dielectric; disposing a mask over the work function modifying material deposited on the gate dielectric disposed on the first channel region; removing the work function modifying material from the unmasked gate dielectric disposed on the second channel region; removing the mask from the work function modifying material deposited on the gate dielectric disposed on the first channel region; forming a first gate electrode on the work function modifying material deposited on the first channel region and forming a second gate electrode on the gate dielectric disposed on the second channel region. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10811413-B2 |
priorityDate |
2015-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |