Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7853 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66977 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2017-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2018-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c871888b68c886c8f8a3b46db897a93c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9708d5cdbf720d37cb94c1f5e5cc65aa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bbd2509f4ab17977bfbc52919bbb8694 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c842b8496a8c73d3b10dd87deba7da0a |
publicationDate |
2018-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10164116-B2 |
titleOfInvention |
FETs and methods for forming the same |
abstract |
FETs and methods for forming FETs are disclosed. A structure comprises a substrate, a gate dielectric and a gate electrode. The substrate comprises a fin, and the fin comprises an epitaxial channel region. The epitaxial channel has a major surface portion of an exterior surface. The major surface portion comprising at least one lattice shift, and the at least one lattice shift comprises an inward or outward shift relative to a center of the fin. The gate dielectric is on the major surface portion of the exterior surface. The gate electrode is on the gate dielectric. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022302621-A1 |
priorityDate |
2013-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |