http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10160645-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dab7f72151c90995ccee3d82b1d60c57 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_728cbe1f705ae61501f25d61297d180c |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B9-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-2275 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y25-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03L5-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y25-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03L5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B9-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-22 |
| filingDate | 2016-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a76731247297dcc02c0ea08f4a48b579 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fcb915aef6de5628fc087a57cc31308b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f43ca095c079f59929e134cbd7ef9075 |
| publicationDate | 2018-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-10160645-B2 |
| titleOfInvention | Microwave AC conductivity of domain walls |
| abstract | Microwave AC conductivity may be improved or tuned in a material, for example, a dielectric or semiconductor material, by manipulating domain wall morphology in the material. Domain walls may be created, erased or reconfigured to control the AC conductivity, for example, for crafting circuit elements. The density and placement of domain walls may increase or decrease the AC conductivity and may control AC conduction pathways through the material. An electric potential applied to the material's surface may create a desired pattern of domain walls to meet desired AC conductivity criteria. Incline angle of the domain walls may be modified relative to a crystallographic axis of the material to temporarily or permanently modify or gate AC conductivity of the material. For example, the AC conductivity of the material may be gated by domain wall incline angle to increase, decrease or throttle current flowing through the material for an electronic circuit element. |
| priorityDate | 2015-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.