Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78642 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66666 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-535 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
filingDate |
2018-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2018-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0c1736f581429f74e2dae6c9a2c78b7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bb0e7f92d1794dd8c4031583e6add1e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_461ad7ffa039b59e0a0db8439512590b |
publicationDate |
2018-12-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10158021-B2 |
titleOfInvention |
Vertical pillar-type field effect transistor and method |
abstract |
Disclosed is a method of forming a vertical pillar-type field effect transistor (FET). One or more semiconductor pillars are formed by epitaxial deposition in one or more openings, respectively, that extend through a first dielectric layer and that have high aspect ratios in two directions. The first dielectric layer is etched back and the following components are formed laterally surrounding the semiconductor pillar(s): a first source/drain region above and adjacent to the first dielectric layer, a second dielectric layer on the first source/drain region, a gate on the second dielectric layer and a gate cap on the gate. The gate cap extends over the top surface(s) of the semiconductor pillar(s). A recess is formed in the gate cap to expose at least the top surface(s) of the semiconductor pillar(s) and a second source/drain region is formed within the recess. Also disclosed is the vertical pillar-type FET structure. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10755937-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10971367-B2 |
priorityDate |
2017-02-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |