Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165 |
filingDate |
2017-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2018-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac3c9365ac185348d99c5460aa0b0e23 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b71ed8d1014ded9f660a7efc37fd1c00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15c31ac78394568dea434cbc69f28a69 |
publicationDate |
2018-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10147820-B1 |
titleOfInvention |
Germanium condensation for replacement metal gate devices with silicon germanium channel |
abstract |
A semiconductor structure and a method for fabricating the same. The structure includes a substrate and at least one semiconductor fin. The semiconductor structure further includes a channel region within the semiconductor fin. The channel region includes a higher content of germanium than remaining portions of the semiconductor fin. The semiconductor structure also includes a gate stack in contact with the semiconductor fin. The method includes removing a dummy gate formed on at least one semiconductor fin. The removal of the dummy gate exposes a channel region of the semiconductor fin. A germanium dioxide layer is formed in contact with the channel region. A condensation process is performed after the germanium dioxide layer has been formed. The condensation process increases germanium content only in the channel region. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10686076-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11062951-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11322588-B2 |
priorityDate |
2017-07-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |