http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10141394-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bcb788ac2ea1a772ff0a53a49e5e2375 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-92 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16227 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02 |
| filingDate | 2016-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_358a3cc30cf4abfe23b7df968e590762 |
| publicationDate | 2018-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-10141394-B2 |
| titleOfInvention | Integrated circuit comprising a metal-insulator-metal capacitor and fabrication method thereof |
| abstract | The disclosed technology relates to a metal-insulator-metal capacitor (MIMCAP) integrated as part of a back-end-of-line of an integrated circuit (IC). In one aspect, a MIMCAP comprises a first planar electrode having perforations formed therethrough, and a metal-insulator-metal (MIM) stack lining inner surfaces of cavities formed in the perforations and extending into the substrate. The MIMCAP additionally comprises a second electrode having a planar portion and metal extensions extending from the planar portion into the cavities. The first electrode and the planar portion of the second electrode are formed of or comprise planar metal areas of the respective metallization levels, which can be formed by a damascene process, which allows for a reduction of the series resistance. A low aspect ratio can be obtained using one electrode having a 3D-structure (the electrode having extensions extending into the cavities). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11398545-B2 |
| priorityDate | 2015-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.