| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b657bae7c6ba14f228fefd2393ecc834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ee1c19da359446fb5c4f0458a57b783d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24355
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02024 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-04 |
| filingDate |
2017-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c29993f251e84c741bb017cc476b6ee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cac30061a9ebeff45e5ab467d40bf01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7617706286cf9058aa23eadaccc9c153 |
| publicationDate |
2018-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10138397-B2 |
| titleOfInvention |
Single-crystal silicon-carbide substrate and polishing solution |
| abstract |
The present invention relates to a single-crystal silicon-carbide substrate provided with a principal surface having an atomic step-and-terrace structure containing atomic steps and terraces derived from a crystal structure, in which the atomic step-and-terrace structure has a proportion of an average line roughness of a front edge portion of the atomic step to a height of the atomic step being 20% or less. |
| priorityDate |
2011-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |