http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10134896-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate | 2013-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa35986b39a8f0aaa6ce5934ec68891d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3fd2aaeb77490d2e5530b5417321a60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d5aedfb809a5ce3410579b1a1bace87 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76e3bf07f1d6c60f9a95bb5c17bcd5e5 |
| publicationDate | 2018-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-10134896-B2 |
| titleOfInvention | Cyclic deposition etch chemical vapor deposition epitaxy to reduce EPI abnormality |
| abstract | A semiconductor substructure with an improved source/drain structure is described. The semiconductor substructure can include an upper surface; a gate structure formed over the substrate; a spacer formed along a sidewall of the gate structure; and a source/drain structure disposed adjacent the gate structure. The source/drain structure is disposed over or on a recess surface of a recess that extends below said upper surface. The source/drain structure includes a first epitaxial layer, having a first composition, over or on the interface surface, and a subsequent epitaxial layer, having a subsequent composition, over or on the first epitaxial layer. A dopant concentration of the subsequent composition is greater than a dopant concentration of the first composition, and a carbon concentration of the first composition ranges from 0 to 1.4 at.-%. Methods of making semiconductor substructures including improved source/drain structures are also described. |
| priorityDate | 2013-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.