| abstract |
According to one embodiment, a magnetic memory device includes a memory cell array unit including magnetoresistive elements provided in an array in first and second directions, each including a first magnetic layer having a variable magnetization direction, a second magnetic layer having a fixed magnetization direction, and a nonmagnetic layer between the first and second magnetic layers, first transistors provided in an array in the first and second directions, and electrically connected to the magnetoresistive elements, respectively, switching units each electrically connected to corresponding ones of the first transistors in series, and each including at least one second transistor, wherein the first magnetic layers are separated from each other in the first and second directions, and the second magnetic layers are continuously provided in the first and second directions. |