| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_114e4423ec77cbc8dab9d0a98909704e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-5657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-2275
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-2273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D5-12 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D5-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-42 |
| filingDate |
2017-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9d784ab93c4eacf4955b40ef0817b9e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37d4ed14c12852a50dbe8358470013b5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3d13f18673627ca87cfe0e41485c7e1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e9ee5c466349f5155e8474bce666d8a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb284d066ea10ad2cf545fbf59029a2b |
| publicationDate |
2018-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10115456-B2 |
| titleOfInvention |
Multi-states nonvolatile opto-ferroelectric memory material and process for preparing the same thereof |
| abstract |
The invention deals with multi-states nonvolatile opto-ferroelectric memory element and method of preparing the same thereof. This invention describes multi-states nonvolatile opto-ferroelectric memory element consisting of opto-ferroelectric memory material comprised of Pb1-x(Bi0.5Li0.5)x(Ti1-yZry)O3, wherein x=0.2 to 0.8 and y=0.2 to 0.6, said memory material (PBLZT) photovoltaic ferroelectric material is characterized by a single-phase opto-ferroelectric materials, photovoltaic and multi-states ferroelectric memory material. The invention relates to process of preparing multi-states nonvolatile opto-ferroelectric memory material by solid route, solution-gel process and pulsed laser process. It describes development of multi-states nonvolatile opto-ferroelectric memory material at room temperature. Invention describes a ferroelectric material whose polarization is switched by white light and low power LASER (10-50 mW) with wavelength (405 nm). |
| priorityDate |
2016-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |