| abstract |
Embodiments of the disclosure generally relate to a method of improving quality of a barrier layer suitable for forming high aspect ratio through substrate vias. In one example, a method for depositing a barrier layer includes depositing a barrier layer in a hole formed in a substrate, exposing the deposited barrier layer to a processing gas at a pressure greater than about 2 bars, and, maintaining a temperature of the substrate between about 150 degrees and about 700 degrees Celsius while in the presence of the processing gas. |