Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bcb788ac2ea1a772ff0a53a49e5e2375 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
filingDate |
2016-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2018-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57dd963912a1781d23044228cc78c135 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_690368dd784c597b7ad932854ca177a1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_414cf9bfc9fdd7fcab0877b88b1df0f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4810dc3d1f8ef3542562fc6af7d23579 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88f8cc1ad89ead3413da14a8e63c9d0b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_873d3e6a00deeeeb84e6dbb73297846f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f0d07a288d4d85dea6f434ad8e00cbb |
publicationDate |
2018-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10090393-B2 |
titleOfInvention |
Method for forming a field effect transistor device having an electrical contact |
abstract |
A method for fabricating a semiconductor structure is provided. The method includes providing a patterned substrate comprising a semiconductor region and a dielectric region. A conformal layer of a first dielectric material is deposited directly on the patterned substrate. A layer of a sacrificial material is deposited overlying the conformal layer of the first dielectric material. The sacrificial material is patterned, whereby a part of the semiconductor region remains covered by the patterned sacrificial material. A layer of a second dielectric material is deposited on the patterned substrate, thereby completely covering the patterned sacrificial material. A recess is formed in the second dielectric material by completely removing the patterned sacrificial material. The exposed conformal layer of the first dielectric material is removed selectively to the semiconductor region. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018174927-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10892336-B2 |
priorityDate |
2015-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |