Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76852 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5226 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
filingDate |
2016-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2018-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d95da27a45964a34ff6f2d58e42ee8b7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_117d5ebf0de2ded0078685ab2c7b6e43 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7238c0097fc321cf29d7c47daed70965 |
publicationDate |
2018-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10090195-B2 |
titleOfInvention |
Method including a formation of a diffusion barrier and semiconductor structure including a diffusion barrier |
abstract |
A method includes forming a diffusion barrier over a semiconductor structure. The formation of the diffusion barrier includes performing a first tantalum deposition process, the first tantalum deposition process forming a first tantalum layer over the semiconductor structure, performing a treatment of the first tantalum layer, and performing a second tantalum deposition process after the treatment of the first tantalum layer. The treatment modifies at least a portion of the first tantalum layer. The second tantalum deposition process forms a second tantalum layer over the first tantalum layer. |
priorityDate |
2015-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |