Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6681 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2017-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2018-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e08d91ff19fce642276d4cd68e163970 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a5f69c3f59b08f18c724a24f7736558 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9109b68b55594387713c374f294c46cb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa57155a94ec485068066724e7721ca7 |
publicationDate |
2018-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10084041-B2 |
titleOfInvention |
Method and structure for improving FinFET with epitaxy source/drain |
abstract |
Isolation structures are formed to laterally surround a gate material block such that each sidewall of the gate material block abuts a corresponding sidewall of the isolation structures. Sidewalls of the gate material bock define ends of gate structures to be subsequently formed. The isolation structures obstruct lateral growth of a semiconductor material during a selective epitaxial grown process in formation of source/drain regions, thereby preventing merging of the source/drain regions at the ends of gate structures. As a result, a lateral distance between each sidewall of the gate material block and a corresponding outermost sidewall of an array of a plurality of semiconductor fins can be made sufficiently small without causing the electrical shorts of the source/drain regions. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11037829-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11621196-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10395990-B2 |
priorityDate |
2014-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |