| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-4821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76892
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| filingDate |
2016-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17e86689398e1183859b4304205fcefe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22749af96ebc50a82eb4bc0112ff3754
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0a22cc83309c84b0f1780fdd7bdf2ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc8144bf0718a94598514be5068143f3 |
| publicationDate |
2018-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10074607-B2 |
| titleOfInvention |
Semiconductor device structure with graphene layer |
| abstract |
A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and an interconnect structure formed over the substrate. The interconnect structure includes a first dielectric layer formed over the substrate, and a first graphene layer formed in and on the first dielectric layer. The first graphene layer includes a first portion in the first dielectric layer and a second portion on the first dielectric layer and a first insulating layer formed over the first portion of the first graphene layer. |
| priorityDate |
2016-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |