| abstract |
A method of fabricating a semiconductor structure includes providing an engineered substrate including a polycrystalline substrate, a barrier layer encapsulating the polycrystalline substrate, and a bonding layer coupled to the barrier layer. The method further includes forming a first silicon layer coupled to the bonding layer, forming a dielectric layer coupled to the first silicon layer, forming a second silicon layer coupled to the dielectric layer, forming a GaN layer coupled to the second silicon layer, forming a GaN based device coupled to the GaN layer, removing the engineered substrate to expose a back surface of the first silicon layer, forming a silicon based device coupled to the back surface of the first silicon layer, forming a via from the back surface of the first silicon layer, filling the via with a conducting material, and interconnecting the GaN based device and the silicon based device through the via. |