Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7845 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28097 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
filingDate |
2017-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2018-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_746ea9fd3c21bb3a748aa98fc9912a51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91a1ec0cf2e4f48c853e54e6cf30f941 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b03e9ba0248a16b700dabd53a209919 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a98778a8da1a48147ab1d621c2294365 |
publicationDate |
2018-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10043904-B2 |
titleOfInvention |
Method and structure of improving contact resistance for passive and long channel devices |
abstract |
A semiconductor device includes a gate arranged on a substrate; a source/drain formed on the substrate adjacent to the gate; a source/drain contact extending from the source/drain and through an interlayer dielectric (ILD) over the source/drain, a portion of the source/drain positioned adjacent to the source/drain contact; and a silicide positioned along a sidewall of the source/drain contact between the portion of the source/drain and the source/drain contact, and along an endwall of the source/drain contact between the source/drain contact and the substrate. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11038055-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10396200-B2 |
priorityDate |
2015-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |