| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b7886f9841c03e2449d28f454ebbe1dc |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02123 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate |
2018-01-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab097613d55be77b4ae1f7f8ef9ab5ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a00fe93a02f238a2914d59804ee2780c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_344cee848ef64e7a9cdcb8232d192dd7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d37ffea7cf4603a613d4cd6bcbe2f799
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c9b9d5ff7eacc3d15474dd07082663d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5cde8e4981bf298d0288d2c88ee66217 |
| publicationDate |
2018-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10043658-B2 |
| titleOfInvention |
Precursors for silicon dioxide gap fill |
| abstract |
A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material. |
| priorityDate |
2007-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |